Image sensor and method for fabricating the same

ABSTRACT

An image sensor may include a substrate having photoelectric conversion regions respectively formed on a plurality of pixels and charge trap regions overlapping with the respective photoelectric conversion regions and having depths or thicknesses that are different, for each of the respective pixel.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean Patent Application No,10-2013-0104760, filed on Sep. 2, 2013, which is incorporated herein byreference in its entirety.

BACKGROUND

1. Field

Exemplary embodiments of the present invention relate to fabrication ofa semiconductor device, and more particularly to an image sensor andmethod for fabricating the same.

2. Description of the Related Art

An image sensor is a device for converting an optical image into anelectrical signal. Image sensors are generally categorized as chargecoupled device (CCD) types and CMOS image sensor (CIS) types. The imagesensor has a plurality of pixels disposed in the form of a 2 dimensionalmatrix. Each of the plurality of pixels outputs a pixel signalcorresponding to incident light. The pixel accumulates a photochargecorresponding to the incident light through a photoelectric conversionelement represented by a photodiode and outputs the pixel signal basedon the accumulated photocharge.

A dark current is induced due to a charge generated at the surface ofsubstrate where the photoelectric conversion element is disposed in theimage sensor. The dark current acts as noise to the pixel signal, andthus deteriorates the properties of the image sensor.

SUMMARY

Various exemplary embodiments of the present invention are directed toan image sensor and method for fabricating the same that may prevent theproperties of the image sensor from deteriorating due to the darkcurrent.

In an exemplary embodiment of the present invention, an image sensor mayinclude a substrate including photoelectric conversion regionsrespectively formed on a plurality of pixels and charge trap regionsoverlapping with the respective photoelectric conversion regions andhaving depths or thicknesses that are different, for each of therespective pixel.

In an exemplary embodiment of the present invention, an image sensor mayinclude a substrate including a first pixel suitable for generating afirst pixel signal in response to an incident light of a firstwavelength band and a second pixel suitable for generating a secondpixel signal in response to an incident light of a second wavelengthband, first and second photoelectric conversion regions respectivelyformed on the substrate corresponding to the first pixel and the secondpixel, a first charge trap region overlapped with, the firstphotoelectric conversion region, and a second charge trap regionoverlapped with the second photoelectric conversion region, wherein awavelength of the second wavelength band is shorter than a wavelength ofthe first wavelength band, and a depth or thickness of the second chargetrap region is smaller than a depth or thickness of the first chargetrap region.

In an exemplary embodiment of the present invention, method offabricating an image sensor may include forming photoelectric conversionregions on a front side of a substrate having a plurality of pixels tocorrespond to the respective pixels, forming a dopant-injection regionthrough ion-injection of a dopant to a rear side of the substrate,selectively forming a barrier pattern on the rear side of the substratefor each of the plurality of pixels, and forming charge trap regionshaving different depths or thicknesses from each other for therespective pixels utilizing laser annealing to activate the dopant ofthe dopant-injection region.

In accordance with the above embodiments of the present invention, theimage sensor may prevent generation of the dark current by the chargetrap region that has depth corresponding to incident light inputted toeach of the plurality of pixels. The image sensor may also prevent thesensitivity of the image sensor from being reduced by the charge trapregion. Further, the image sensor may prevent crosstalk between adjacentpixels.

Still further, the reflectance or transmittance of a laser may becontrolled by using a barrier pattern selectively formed in each of theplurality of pixels, which makes it possible that lasers with variousintensities illuminate the plurality of respective pixels at the sametime, charge trap regions with various depths are easily formed for theplurality of respective pixels, thus the fabrication process becomessimpler and fabrication yield is improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram illustrating an image sensor inaccordance with an embodiment of the present invention;

FIG. 2 is a plane diagram illustrating a pixel array of the image sensorin accordance with an embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating a typical image sensortaken along a line A-A′ illustrated in FIG. 2;

FIG. 4A is a cross-sectional view illustrating the image sensor inaccordance with an embodiment of the present invention, taken along aline A-A′ illustrated in FIG. 2;

FIG. 4B is a cross-sectional view illustrating the image sensor inaccordance with another embodiment of the present invention, taken alonga line A-A′ illustrated in FIG. 2;

FIGS. 5A to 5G are cross-sectional views illustrating a method forfabricating an image sensor in accordance with an embodiment of thepresent invention;

FIG. 6A is a graph illustrating laser reflectance with respect to thethickness of a barrier layer (oxide/nitride) in accordance with anembodiment of the present invention;

FIG. 6B is a graph illustrating the depth of a charge trap region withrespect to laser intensity during laser annealing in accordance with anembodiment of the present invention;

FIG. 7 is a block diagram illustrating an image processing systemincluding a pixel array in accordance with an embodiment of the presentinvention;

FIG. 8 is a detailed block diagram illustrating an image sensor shown inFIG. 7; and

FIG. 9 is a block diagram illustrating an image processing systemincluding an image sensor in accordance with an embodiment of thepresent invention.

DETAILED DESCRIPTION

Various exemplary embodiments of the present invention will be describedbelow in more detail with reference to the accompanying drawings. Thepresent invention may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the presentinvention to those skilled in the art. Throughout the disclosure, likereference numerals refer to like parts throughout the various figuresand embodiments of the present invention.

The drawings are not necessarily to scale and in some instances,proportions may have been exaggerated in order to clearly illustratefeatures of the embodiments. It should be readily understood that themeaning of “on” and “over” in the present disclosure should beinterpreted in the broadest manner such that “on” means not only“directly on” but also “on” something with an intermediate feature(s) ora layer(s) therebetween and that “over” means not only directly on topbut also on top of something with an intermediate feature(s) or alayer(s) therebetween. It is also noted that in this specification,“connected/coupled” refers to one component not only directly couplinganother component but also indirectly coupling another component throughan intermediate component. In addition, a singular form may include aplural form as long as it is not specifically mentioned in a sentence.

Image sensors are generally categorized as charge coupled device (CCD)types and the CMOS image sensor (CIS) types. The CIS type image sensorsare categorized as front-side illumination image sensors (FIS) andback-side illumination image sensors (BIS). The back-side illuminationimage sensor (BIS) has better operation properties and betterfabrication yield than the other types of image sensors, for example thecharge coupled devices (CCDs) or the front-side illumination imagesensors (FISs) but there is frequent induction of the dark current. Setforth below is description with example of the back-side illuminationimage sensor (BIS).

In the description, a first conductivity type and a second conductivityare complementary to each other. For example, when the firstconductivity type is P-type, then the second conductivity type isN-type. When the first conductivity type is N-type, then the secondconductivity type is P-type. Set forth below is description with anexample that the first conductivity type is P-type and the secondconductivity type is N-type.

Exemplary embodiments of the present invention provide an image sensorand method for fabricating the same that may prevent deteriorationproperties of the image sensor due to the dark current. The dark currentacts as noise to a pixel signal generated by each pixel included in animage sensor having a plurality of pixels, and thus changes theproperties of the image sensor. For example, signal to noise ratio (SNR)is increased, which reduces the sensitivity of the image sensor.

According to exemplary embodiments of the present invention, the imagesensor may have a charge trap region that is formed to correspond to aphotoelectric conversion region of each of the plurality of pixels andhas a depth corresponding to the wave band of incident light inputted toeach of the plurality of pixels.

The charge trap region traps charge that induces the dark current thuspreventing the dark current from being generated. The charge trap regionformed to correspond to the photoelectric conversion region may overlapwith the photoelectric conversion region.

Overlap of the charge trap region and the photoelectric conversionregion may represent layered disposition, which means that the chargetrap region overlaps with the photoelectric conversion region whenviewed from the top while the charge trap region and the photoelectricconversion region may separate from each other in different layers ormay be in contact with each other as upper and lower layers.

Set forth below is a description of basic operation of an image sensorin accordance with an embodiment of the present invention and the priorart.

FIG. 1 is an equivalent circuit diagram illustrating an image sensor inaccordance with an embodiment of the present invention.

FIG. 2 is a plane diagram illustrating a pixel array of the image sensorin accordance with an embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a typical image sensortaken along a line A-A′ illustrated in FIG. 2.

Referring to FIG. 1, each of the plurality of pixels in the image sensorin accordance with an embodiment of the present invention may include aphotodiode PD for serving as a photoelectric conversion region, atransfer transistor Tx, a selection transistor Sx, a reset transistor Rxand an access transistor Ax.

A transfer gate of the transfer transistor Tx may be extended to theinside of the substrate. The transfer gate of the transfer transistor Txmay have a form of one of a recess gate, a saddle-fin gate and a buriedgate. A drain of the transfer transistor Tx may be identified as afloating diffusion region FD. The floating diffusion region FD may be asource of the reset transistor Rx.

The floating diffusion region FD may be electrically connected to aselection gate of the selection transistor S. The selection transistorSx and the reset transistor Rx may be connected in series.

The selection transistor Sx, the reset transistor Rx and the accesstransistor Ax may be shared by adjacent pixels, which improve theintegration degree of the image sensor.

The operation of the image sensor in accordance with an embodiment ofthe present invention is described below with reference to FIG. 1.

Under absence of incident light, charge remaining in the floatingdiffusion region FD is emitted by applying a power voltage VDD to adrain of the reset transistor Rx and a drain of the selection transistorSx. After that, with the reset transistor Rx turned off, photocharge oran electron-hole pair is generated in the photodiode PD through externalillumination of incident light to the photodiode PD.

The generated hole moves to and is accumulated in P-type dopant regionand the generated electron moves to and is accumulated in N-type dopantregion. When the transfer transistor Tx is turned on, charge of theaccumulated electron and hole is transferred to and accumulated in thefloating diffusion region FD. Gate bias of the selection transistor Sxvaries in proportion to the accumulated charge, which causes voltagechange to a source of the selection transistor Sx.

When the access transistor Ax is turned on, a pixel signal′ due to thecharge is read to column line, at which the dark current acts as noiseto the pixel signal thereby reducing the sensitivity of the image sensorand increasing the signal to noise ratio SNR.

Referring to FIGS. 2 and 3, a typical image sensor has a plurality ofpixels, for example, a red pixel (R), a green pixel (G) and a blue pixel(B). A photoelectric conversion region 130 is formed on an area of asubstrate 110 corresponding to each pixel. An isolation layer 120 isformed on the substrate 110. An interlayer dielectric layer 140including a signal generation circuit is formed on the front side of thesubstrate 110. Formed on the rear side of the substrate 110 are a chargetrap region 150, a color filter 160 and a micro-lens 170.

The charge trap region 150 of the typical image sensor preventsgeneration of the dark current by trapping charges generating the darkcurrent. The charge trap region 150 is a dopant region generated throughdopant injection and annealing to the rear side of the substrate 110after a thinning process to the rear side of the substrate 110. Thecharge trap region 150 is collectively formed for all pixels and thushas a uniform depth or thickness at the level of the rear side of thesubstrate 110 for all pixels.

As described above, the charge trap region 150 of the typical imagesensor is collectively formed to have the uniform depth or thickness forall pixels without consideration about the characteristics of eachpixel, such as, wavelength of incident light that constrains the imagesensor from preventing generation of the dark current.

The color-separated incident light is absorbed at different depths fromthe rear side of the substrate 110 depending on its waveband orwavelength. The charge trap region 150 with the uniform depth orthickness for all pixels may not properly operate for a pixel for thespecific waveband or wavelength.

For example, in a red pixel the color-separated incident light isabsorbed relatively deep from the rear side of the substrate 110. Thedepth or thickness of the charge trap region 150 may be increased forthe red pixel but it may deteriorate sensitivity of another pixel foranother waveband or wavelength. As an example, for a blue pixel, most ofthe color-separated incident light is absorbed at the surface of thesubstrate 110. The charge trap region 150 with an increased depth orthickness traps photocharge for generating a pixel signal for the bluepixel thereby reducing the sensitivity of the blue pixel and the imagesensor.

An image sensor according to the embodiment of the present inventionthat addresses the concern of the typical image sensor is describedbelow. FIG. 4A is a cross-sectional view illustrating the image sensorin accordance with an embodiment of the present invention, taken along aline A-A′ illustrated in FIG. 2.

FIG. 4B is a cross-sectional view illustrating the image sensor inaccordance with another embodiment of the present invention, taken alonga line A-A′ illustrated in FIG. 2.

Referring to FIGS. 4A and 46, the image sensor according to theembodiment of the present invention may include a substrate 210, aphotoelectric conversion region 230, an isolation layer 220, aninterlayer dielectric layer 240, a charge trap region 250, a bufferlayer 260, a color filter 270 and a micro-lens 280.

The substrate 210 may have a plurality of pixels. The photoelectricconversion region 230 may be formed on an area of the substrate 110corresponding to each pixel. The isolation layer 220 may isolateadjacent pixels from each other. The interlayer dielectric layer 240 maybe formed on the front side of the substrate 110 and include a signalgeneration circuit. The charge trap region 250 may be formed on the rearside of the substrate 110 and have various depths for the respectivepixels. The buffer layer 260 may be formed on the rear side of thesubstrate 110. The color filter 270 may be formed on the buffer layer260. The micro-lens 280 may be formed on the color filter 270.

The plurality of pixels may include a first pixel for generating a pixelsignal corresponding to a first waveband and a second pixel forgenerating a pixel signal corresponding to a second waveband whosewavelength is shorter than that of the first waveband. For example, ifthe first pixel is a red pixel, the second pixel may be a green pixel ora blue pixel. If the first pixel is the green pixel, the second pixelmay be the blue pixel. The plurality of pixels thus may include the redpixel, the green pixel and the blue pixel. The plurality of pixels mayfurther include a white pixel, a black pixel and an infrared pixel.

The substrate 210 may include a semiconductor substrate. Thesemiconductor substrate may be in a monocrystal state and includesilicon-incorporated material. The substrate 210 may includesilicon-incorporated material of the monocrystal. For example, thesubstrate 210 may be a bulk silicon substrate or a silicon-on-insulator(SOI) substrate including a silicon-epilayer. The substrate 210 may bedoped with a dopant of a first conductivity type. The substrate 210 thusmay be of the first conductivity type.

The photoelectric conversion region 230 formed on the area of thesubstrate 110 corresponding to each pixel may include a photo diode. Thephotoelectric conversion region 230 may include a first dopant region232 of a first conductivity type and a second dopant region 234 of asecond conductivity type. The first dopant region 232 may be formed onthe front side of the substrate 210. The second dopant region 234 may beformed under the first dopant region 232. The first dopant region 232and the second dopant region 234 may be overlapped.

The first dopant region 232 may be formed to be in contact with thefront side of the substrate 210 and have a uniform depth or thicknessfor all of the plurality of pixels. The first dopant region 232 mayserve as an electrical barrier preventing the injection of a darksource, for example, an electron, to the second dopant region 234 due todamage of the front side of the substrate 210 caused by a processthereto.

The second dopant region 234 may have a uniform depth or thickness forall of the plurality of pixels as shown in FIG. 4A or various depths orthicknesses through the charge trap region 250 as shown in FIG. 4B. Whenthe depth or thickness of the second dopant region 234 is uniform forall of the plurality of pixels, there may be a distance between thesecond dopant region 234 and the charge trap region 250. When the depthsor thicknesses of the second dopant region 234 varies for all of theplurality of pixels, the second dopant region 234 and the charge trapregion 250 may be in contact with each other.

The interlayer dielectric layer 240 may include one or more selectedfrom a group comprising an oxide material, a nitride material and anoxynitride material. The signal generation circuit formed in theinterlayer dielectric layer 240 may include a plurality of transistors(not illustrated), a metal interconnection of multilayer (notillustrated) and a contact plug (not illustrated) for connecting theplurality of transistors and the metal interconnection of multilayer.

The signal generation circuit may generate or output a pixel signal oran electrical signal corresponding to photocharge generated from thephotoelectric conversion region 230. The plurality of transistors mayinclude a transfer transistor Tx, a reset transistor Rx, a selectiontransistor Sx and an access transistor Ax.

The buffer layer 260 formed on the rear side of the substrate 210 mayprotect the rear side of the substrate 210 during a process. The bufferlayer 260 may eliminate defects formed at the rear side of the substrate210 during a thinning process. The buffer layer 260 may controlintensity of a laser radiated to the substrate 210 during laserannealing for forming the charge trap region 250. The buffer layer 260may be a dielectric layer. The buffer layer 260 may be one selected froma group comprising an oxide material, a nitride material and anoxynitride material. For example, the buffer layer 260 may be an oxidelayer, which may be formed through thermal oxidation.

The charge trap region 250 for trapping charges generating the darkcurrent that prevents generation of the dark current may be formed tocontact the rear side of the substrate 210. The charge trap region 250and the photoelectric conversion region 230 may be vertically in contactwith each other. The depth or thickness of the charge trap region 250may depend on the wavelength of the incident light, which preventsgeneration of the dark current by considering the depth at which theincident light is absorbed and prevents deterioration of the imagesensor caused by the charge trap region 250.

The depth or thickness of the charge trap region 250 may be proportionalto the wavelength of the incident light. For example, the depth orthickness of a first charge trap region 252 formed on the red pixel maybe greater than those of second and third charge trap regions 254 and256 formed on the green pixel and the blue pixel, respectively. Thedepth or thickness of the second charge trap region 254 may be greaterthan that of the third charge trap region 256.

Specifically, the first charge trap region 252 may have a depth orthickness ranging from 0.6 μm to 1 μm at the level of the rear side ofthe substrate 110. The second charge trap region 254 may have a depth orthickness ranging from 0.3 μm to 0.6 μm at the level of the rear side ofthe substrate 210. The third charge trap region 256 may have a depth orthickness ranging from 0.1 μm to 0.3 μm at the level of the rear side ofthe substrate 210.

The charge trap region 250 may be of the first conductivity type. Thecharge trap region 250 may be formed through ion-injection of the dopantof the first conductivity type. Doping concentration of the charge trapregion 250 may be greater than that of the substrate 210. The chargetrap region 250 may have constant doping concentration regardless of thedepth or thickness at the level of the rear side of the substrate 210.The charge trap region 250 may have doping concentration decreasingalong a propagation direction of the incident light from the rear sideto the front side of the substrate 210. The latter may be morefavourable to better sensitivity of the image sensor than the former.

According to the embodiment of the present invention, the image sensormay have the charge trap region 250 having the depth or thicknesscorresponding to the incident light inputted to respective pixels, whichmay prevent generation of dark current, deterioration of sensitivity dueto the charge trap region 250 and crosstalk between the adjacent pixels.

FIGS. 5A to 5G are cross-sectional views illustrating a method forfabricating the image sensor in accordance with an embodiment of thepresent invention.

Set forth below is description for an embodiment of a fabrication methodof the image sensor shown in FIG. 4A with reference to FIGS. 5A to 5G.

Referring to FIG. 5A, a substrate 11 having a logic region and a pixelarray region may be prepared. The pixel array region may include aplurality of pixels arranged in a 2 dimensional matrix.

The plurality of pixels may include a first pixel for generating a pixelsignal corresponding to a first waveband and a second pixel forgenerating a pixel signal corresponding to a second waveband whosewavelength is shorter than that of the first waveband. For example, ifthe first pixel is a red pixel, the second pixel may be a green pixel ora blue pixel. If the first pixel is the green pixel, the second pixelmay be the blue pixel. The plurality of pixels thus may include the redpixel, the green pixel and the blue pixel. The plurality of pixels mayfurther include a white pixel, a black pixel and an infrared pixel.

The substrate 11 may include a semiconductor substrate. Thesemiconductor substrate may be in a monocrystal state and includesilicon-incorporated material. The substrate 11 may includesilicon-incorporated material of the monocrystal. The substrate 11 maybe doped with a dopant of a first conductivity type. The substrate 11thus may be of the first conductivity type.

Next, an isolation layer 12 is formed on the substrate 11 along theborder between the plurality of pixels. The isolation layer 12 may beformed by a shallow trench isolation (STI) process of forming anisolation trench and gap-filling the trench with dielectric material.

Then the photoelectric conversion region 13 is formed on the substrate11 to correspond to each pixel. The photoelectric conversion region 13may be formed with a photo diode.

The photoelectric conversion region 13 may be formed so that a firstdopant region 13A and a second dopant region 133 may be overlapped. Thecharge trap region 13 may be formed through ion-injection of a dopant tothe front side of the substrate 11 and activation of the ion-injecteddopant.

Referring to FIG. 5B, an interlayer dielectric layer 16 including asignal generation circuit is formed on the front side of the substrate11 of the pixel array region. The interlayer dielectric layer 16 mayinclude one or more selected from a group comprising an oxide material,a nitride material and an oxynitride material. The signal generationcircuit formed in the interlayer dielectric layer 16 may include aplurality of transistors (not illustrated), a metal interconnection ofmultilayer (not illustrated) and a contact plug (not illustrated) forconnecting the plurality of transistors and the metal interconnection ofmultilayer.

The signal generation circuit may generate or output a pixel signal oran electrical signal corresponding to photocharge generated from thephotoelectric conversion region 13. The interlayer dielectric layer 16may include a logic circuit formed on the front side of the substrate 11of the logic region.

Referring to FIG. 5C, the thickness of the substrate 11 is reducedthrough a thinning process to the rear side of the substrate 11 so thata range of the incident light inputted to the photoelectric conversionregion 13 is reduced and thus light-interception efficiency is improved.The thinning process may be performed through backgrinding or polishing.

Next, a dopant-injection region 17 is formed on the surface of the rearside of the substrate 11 through ion-injection of a dopant of a firstconductivity type to the rear side of the substrate 11. Thedopant-injection region 17 may be formed on the rear side of thesubstrate 11 of the pixel array region as shown in the figure or on theentire rear side of the substrate 11 including the pixel array regionand the logic region. The dopant-injection region has a status of thedopant being injected to the substrate 11 but not activated. The dopantof the first conductivity type may be Boron.

Referring to FIG. 5D, a buffer layer 18 may be formed on the rear sideof the substrate 11. The buffer layer 260 may eliminate defects formedat the rear side of the substrate 210 during a thinning process. Thebuffer layer 18 may formed to have a uniform depth or thickness over theentire substrate 11. The buffer layer 18 may repair damage to the rearside of the substrate 11 caused by a thinning process and the process offorming the dopant-injection region 17 or ion-injection. The bufferlayer 18 may protect the rear side of the substrate 11 during subsequentprocesses. The buffer layer 18 may be a dielectric layer.

The buffer layer 18 may be one selected from a group comprising an oxidematerial, a nitride material and an oxynitride material. For example,the buffer layer 18 may be formed with an oxide layer through thermaloxidation. The oxide layer may be formed with a silicon oxide (SiO₂).

Next, a barrier layer 19 is formed on the buffer layer 18. The barrierlayer 19 may be formed to have a uniform depth or thickness over theentire substrate 11. The barrier layer 19 may control intensity of alaser radiated to the rear side of the substrate 11 during subsequentlaser annealing for activating the dopant injected to thedopant-injection region 17. The buffer layer 18 may also control theintensity of the laser.

The barrier layer 19 may be a dielectric layer. The barrier layer 19 maybe one selected from a group comprising an oxide material, a nitridematerial and an oxynitride material. For example, the barrier layer 19may be formed with a nitride layer. The nitride layer may be formed witha silicon nitride (Si₃N₄).

Referring to FIG. 5E, a plurality of barrier patterns 19A are formedthrough selectively etching the barrier layer 19 so that the laser isradiated to the substrate 11 with intensity required for the respectivepixels in the subsequent laser annealing. The plurality of barrierpatterns 19A is selectively formed on the rear side of the substrate 11for the respective pixels, due to various reflectance or transmittanceof the laser depending on the various depths or thicknesses of theplurality of barrier patterns 19A in the stack structure of the bufferlayer 1.8 and the plurality of barrier patterns 19A.

For example, the buffer layer 18 of the silicon oxide (SiO₂) has anuniform depth or thickness of 48 nm for all of the plurality of pixelsand the plurality of barrier patterns 19A of silicon nitride (Si₃N₄) hasvarious depths or thicknesses, ranging from 0 nm to 36 nm, for therespective pixels. A barrier pattern 19A corresponding to the red pixelhas the least depth or thickness among the plurality of barrierpatterns. A barrier pattern 19A corresponding to the blue pixel has thegreatest depth or thickness among the plurality of barrier patterns. Abarrier pattern 19A corresponding to the green pixel has a depth orthickness between depths or thicknesses of the barrier patterncorresponding to the red pixel and the barrier pattern corresponding tothe blue pixel.

The barrier pattern 19A corresponding to the green pixel has the lesserdepth or thickness than the depth or thickness of the barrier pattern19A corresponding to the blue pixel. The barrier pattern 19Acorresponding to the red pixel may not be formed.

The reflectance or transmittance of a laser fluctuates like a wavedepending on the depth or thickness of the plurality of barrier patterns19A. The reflectance or transmittance of the laser may be changeddepending on a material type or stack structure of the plurality ofbarrier patterns 19A. The present invention may be embodied in differentforms and should not be construed as limited to the embodiments setforth herein.

For example, the buffer layer 18 of the silicon oxide (SiO₂) has auniform depth or thickness of 48 nm for all of the plurality of pixelsand the plurality of barrier patterns 19A of silicon nitride (Si₃N₄) hasvarious depths or thicknesses, ranging from 36 nm to 70 nm, for therespective pixels. A barrier pattern 19A corresponding to the red pixelhas the greatest depth or thickness among the plurality of barrierpatterns. A barrier pattern 19A corresponding to the blue pixel has theleast depth or thickness among the plurality of barrier patterns. Abarrier pattern 19A corresponding to the green pixel has a depth orthickness between depths or thicknesses of the barrier patterncorresponding to the red pixel and the barrier pattern corresponding tothe blue pixel.

Referring to FIG. 5F, a laser annealing process is performed thatradiates the laser to the rear side of the substrate 11 where the bufferlayer 18 and the plurality of barrier pattern 19A are stacked andactivating the dopant injected to the dopant-injection region 17, whichmay form a charge trap region 20.

The intensity of the laser penetrating the buffer layer 18 and theplurality of barrier patterns 19A and radiating to the rear side of thesubstrate 11 may be controlled depending on the depth or thickness ofthe plurality of barrier patterns 19A.

The depth or thickness of a dopant region or the charge trap region 20activated by the laser may increase as intensity or energy of the laserincreases. The charge trap region 20 with various depths or thicknessesfor respective pixels may be formed through the laser annealing processwith the plurality of barrier patterns 19A that are selectively formedor have various depths or thicknesses for respective pixels.

The laser annealing is used as an annealing process for forming thecharge trap region 20 to recover a crystal state of the damaged rearside of the substrate 11 to a monocrystal state and prevent damage offormed structure during the annealing process.

Referring to FIG. 5G, after removal of the plurality of barrier patterns19A, a color filter 21 is formed on the buffer layer 18 and a micro-lens22 is formed on the color filter 21.

The subsequent processes to complete fabrication of the image sensor areknown art.

The structure and fabrication method of the plurality of barrier pattern19A for allowing a laser to radiate with various intensities forrespective pixels may be implemented by various embodiments other thanthe embodiment described above.

For example, a plurality of barrier patterns 19A may be formed byforming a laminate where a plurality of barrier layers are stacked thenselectively etching one or more of the plurality of barrier layers. Theplurality of barrier layers may be a laminate in which heterogeneousmaterial layers are alternatively stacked or a laminate in which variousmaterial layers differing from each other are stacked.

According to the embodiment of the present invention, the image sensormay have the charge trap region 20 having depths or thicknessescorresponding to the incident light inputted to respective pixels, whichmay prevent generation of dark current, deterioration of sensitivity dueto the charge trap region 20 and crosstalk between the adjacent pixels.

According to the embodiment of the present invention, reflectance ortransmittance of the laser may be controlled by adjusting the depth orthickness of the barrier layer, which makes it possible that the laserwith various intensities illuminates the respective pixels at the sametime and charge trap regions with various depths are easily formed forthe respective pixels. The fabrication method according to embodimentsof the present invention may reduce the process for forming the chargetrap region 20 with various depths compared with a multipleion-injecting process, and thus advantageously affect fabrication yield.

FIG. 6A is a graph illustrating laser reflectance with respect to thethickness of the barrier layer (oxide/nitride) in accordance with anembodiment of the present invention.

Referring to FIG. 6A, it can be seen that the reflectance of the laserilluminated to a laminate, where the silicon oxide (SiO₂) or the bufferlayer 18 and the silicon nitride (Si₃N₄) or the barrier layer 19A aresequentially stacked, fluctuates with regularity as the depth of thesilicon nitride increases with the fixed depth of the silicon oxide,which means that intensity of the laser penetrating the laminate may becontrolled by adjusting the depth or thickness of the silicon nitrideand/or the silicon oxide of the laminate.

The intensity of the laser penetrating the laminate depends on the depthor thickness of the laminate even though the laser radiates to thelaminate with the same intensity. Therefore, according to the embodimentof the present invention, the charge trap region with various depths orthicknesses may be easily formed with a one time use of the laserannealing process with the barrier pattern selectively formed or thebarrier pattern whose thickness is adjusted depending on characteristicsof respective pixels.

FIG. 6B is a graph illustrating the depth of the charge trap region withrespect to laser intensity during laser annealing in accordance with anembodiment of the present invention.

Referring to FIG. 6B, it is shown that the depth of the dopant regionactivated by the laser annealing or the depth of the charge trap regionis controlled by the intensity of the laser. As the intensity of thelaser increase, the depth of the charge trap region increases.

FIG. 7 is a block diagram illustrating an image processing systemincluding a pixel array in accordance with an embodiment of the presentinvention.

Referring to FIG. 7, the image processing system 1000 may include animage sensor 1100, a digital signal processor (DSP) 1200 a display unit1300 and a lens module 1500.

The image sensor 1100 may include a pixel array 1110, a row driver 1120,a correlated double sampling (CDS) block 1130, an analogue to digitalconverter (ADC) 1140, a ramp signal generator 1160, a timing generator1170, a control register 1180 and a buffer 1190.

The image sensor 1100 may detect an optical image of an object 1400photographed by the lens module 1500 under the control of the digitalsignal processor (DSP) 1200. The digital signal processor (DSP) 1200 mayoutput to the display unit 1300 an image detected and outputted by theimage sensor 1100. The display unit 1300 may represent a device capableof displaying the image outputted from the digital signal processor(DSP) 1200. For example, the display unit 1300 may be a terminal of acomputer, a mobile communication apparatus and other image displayapparatuses.

The digital signal processor (DSP) 1200 may include a camera controller1201, an image signal processor (ISP) 1203 and an interface (I/F) 1205.

The camera controller 1201 may control operation of the control resistor1180. The camera controller 1201 may control operation of the imagesensor 1100 or the control register 1180 by using an inter-integratedcircuit I²C which does not limit the scope of the present invention.

The image signal processor (ISP) 1203 may receive an image or an imagedata, process the received image and output the processed image throughthe interface (I/F) 1205 to the display unit 1300.

For example, FIG. 7 shows that the image signal processor (ISP) 1203 isincluded in the digital signal processor (DSP) 1200. The image signalprocessor (ISP) 1203 may be disposed in the image sensor 1100 accordingto system design. The image sensor 1100 and the image signal processor(ISP) 1203 may be put together in a package, for example as a multi-chippackage (MCP).

The pixel array 1110 may include the pixel array in accordance with anembodiment of the present invention. Each of the plurality of pixels inthe pixel array 1110 may include the photoelectric conversion region andthe charge trap region overlapping with the photoelectric conversionregion and having a depth corresponding to a wave band of incident lightinputted thereto. In accordance with the embodiments of the presentinvention, the image processing system may prevent generation of thedark current and deterioration of sensitivity due to the charge trapregion, which may improve operation properties of the image sensor,

FIG. 8 is a detailed block diagram illustrating an image sensor shown inFIG. 7.

Referring to FIGS. 7 and 8, the timing generator 1170 may generate oneor more control signals for controlling each of the row driver 1120, thecorrelated double sampling (CDS) block 1130, the analogue to digitalconverter (ADC) 1140 and the ramp signal generator 1160. The controlregister 1180 may generate one or more control signals for controllingthe ramp signal generator 1160, the timing generator 1170 and the buffer1190. The control register 1180 may be controlled by the cameracontroller 1201.

The row driver 1120 may drive the pixel array by a row as a unit. Forexample, the row driver 1120 may generate a selection signal forselecting one of the plurality of rows. Each of the plurality of rowsmay include a plurality of pixels. FIG. 8 shows simplified dispositionof the plurality of pixels for clear description. The plurality ofpixels may include the pixel array described above.

The plurality of pixels may detect illuminating incident light andoutput an image reset signal and an image signal to the correlateddouble sampling (CDS) block 1130. The pixel array in accordance with theembodiment of the present invention may prevent generation of the darkcurrent and deterioration of sensitivity due to the charge trap region,which may generate with good quality a pixel signal or the image resetsignal and the image signal. The correlated double sampling (CDS) block1130 may perform a correlated double sampling to each of the receivedimage reset signal and the image signal.

The analogue to digital converter (ADC) 1140 may compare a ramp signaloutputted from the ramp signal generator 1160 and the correlated doublesampled signal outputted from the correlated double sampling (CDS) block1130 to output a comparison result signal, count transition time of thecomparison result signal and output the counted value to the buffer1190.

The analogue to digital converter (ADC) 1140 may include a comparingblock 1145 and a counter block 1150. The comparing block 1145 mayinclude a plurality of comparators 1149. Each of the plurality ofcomparators 1149 may be connected to the correlated double sampling(CDS) block 1130 and the ramp signal generator 1160. The plurality ofoutput signals from the correlated double sampling (CDS) block 1130 maybe inputted to a first terminal, for example a negative terminal, of therespective comparators 1149 and the ramp signal from the ramp signalgenerator 1160 may be inputted to a second terminal, for example apositive terminal, of each of the comparators 1149.

The plurality of comparators 1149 may receive and compare the respectiveoutput signals from the correlated double sampling (CDS) block 1130 andthe ramp signal from the ramp signal generator 1160 and output thecomparison result signals, respectively. For example, a comparisonresult signal outputted from a first comparator 1149 for comparing anoutput signal from one of the plurality of pixels and the ramp signalfrom the ramp signal generator 1160 may correspond to a differencebetween the image signal and the image reset signal that variesdepending on illuminance of incident light inputted from outside.

The ramp signal generator 1160 may operate under the control of thetiming generator 1170.

The counter block 1150 may include a plurality of counters 1151. Theplurality of counters 1151 may be connected to respective outputterminals of the plurality of comparators 1149. The counter block 1150may count the transition time of the comparison result signal using aclock signal CNT_CLK outputted from the timing generator 1170 and outputa digital signal or the counted value to the buffer 1190. The counterblock 1150 may output a plurality of digital image signals, Each of thecounters 1151 may be an up/down counter or a bit-wise inversion counter.

The buffer 1190 may store, sense, amplify and output the plurality ofdigital image signals outputted from the analogue to digital converter(ADC) 1140. The buffer 1190 may include a memory block 1191 and a senseamplifier 1192. The memory block 1191 may include a plurality ofmemories 1193 storing the respective counted value outputted from theplurality counters 1151. For example, the counted value may represent acounted value with respect to a signal outputted from the plurality ofpixels.

The sense amplifier 1192 may sense and amplify each of the countedvalues outputted from the memory block 1191. The image sensor 1100 mayoutput the image data to the digital signal processor (DSP) 1200.

FIG. 9 is a block diagram illustrating an image processing systemincluding an image sensor in accordance with an embodiment of thepresent invention.

Referring to FIG. 9, the image processing system 2000 may be a dataprocessing apparatus using or supporting mobile industry processorinterfaces (MIPI) such as a mobile communication apparatus for example,a personal digital assistant (PDA), a mobile phone or a smart phone. Theimage processing system 2000 may be a portable apparatus such as atablet computer.

The image processing system 2000 may include an application processor2010, an image sensor 2040 and a display 2050.

A camera serial interface (CSI) host 2012 in the application processor2010 may perform serial communication with CSI device 2041 of the imagesensor 2040 through a camera serial interface (CSI). The image sensor2040 may include the image sensor in accordance with an embodiment ofthe present invention. A display serial interface (DSI) host 2011 mayperform serial communication with DSI device 2051 of the display 2050through a display serial interface (DSI).

The image processing system 2000 may further include a radio frequency(RF) chip 2060 capable of performing communication with the applicationprocessor 2010. A physical layer (PHY) 2013 of the application processor2010 and a physical layer (PHY) 2061 of the radio frequency (RF) chip2060 may exchange data according to mobile industry processor interface(MIPI) digital radio frequency (DigRF).

The image processing system 2000 may further include a geographicpositioning system (GPS) 2020, a data storage device 2070, a memory 2085such as dynamic random access memory (DRAM) and a speaker 2090. Theimage processing system 2000 may perform communication through aworldwide interoperability for microwave access (Wimax) unit 2030, awireless local area network (WLAN) unit 2100 and an ultra-wideband (UWB)unit 2110.

Although various embodiments have been described for illustrativepurposes, it will be apparent to those skilled in the art that variouschanges and modifications may be made without departing from the spiritand scope of the invention as defined in the following claims.

What is claimed is:
 1. An image sensor comprising: a substrate havingphotoelectric conversion regions respectively formed on a plurality ofpixels; and charge trap regions overlapping with the respectivephotoelectric conversion regions and having depths or thicknesses thatare different, for each of the respective pixel.
 2. The image sensor ofclaim wherein the charge trap region increases in depth or thickness fora longer wavelength of an incident light inputted through the pixel ofthe charge trap region.
 3. The image sensor of claim wherein each of thephotoelectric conversion regions includes: a first dopant region of afirst conductivity type; and a second dopant region of a secondconductivity type that is complementary to the first conductivity type,and wherein the charge trap region corresponding to the photoelectricconversion region includes a dopant region of the first conductivitytype.
 4. The image sensor of herein the charge trap region has a dopingconcentration that is constant regardless of the depth, or decreases ininverse proportion to the depth.
 5. The image sensor of claim 3, whereinthe first dopant region is formed at a surface of a front side of thesubstrate, the second dopant region is formed in contact with the firstdopant region and the charge trap region is formed at a surface of arear side of the substrate, and the first dopant region, the seconddopant region and the charge trap region are overlapped with each otherand sequentially stacked.
 6. The image sensor of claim 5, wherein thefirst dopant region on the plurality of pixels has a uniform depth orthickness.
 7. The image sensor of claim 5, wherein the second dopantregion and the charge trap region are disposed at a set distance, thesecond dopant region has a uniform depth or thickness and the chargetrap region has a depth or thickness that is different for each pixel.8. The image sensor of claim 5, wherein the second dopant region and thecharge trap region are in contact with each other, the second dopantregion and the charge trap region have a depth or thickness that aredifferent for each pixel, and the depth or thickness of the seconddopant region is inversely proportional to the depth or thickness of thecharge trap region.
 9. The image sensor of claim further comprising: abarrier layer formed on the substrate and in contact with the chargetrap region; a color filter formed on the barrier layer; and amicro-lens formed on the color filter.
 10. An image sensor comprising: asubstrate having a first pixel suitable for generating a first pixelsignal in response to an incident light of a first wavelength band, anda second pixel suitable for generating a second pixel signal in responseto an incident light of a second wavelength band; first and secondphotoelectric conversion regions respectively formed on the substratecorresponding to the first pixel and the second pixel; a first chargetrap region overlapped with the first photoelectric conversion region;and a second charge trap region overlapped with the second photoelectricconversion region, wherein a wavelength of the second wavelength band isshorter than a wavelength of the first wavelength band, and a depth orthickness of the second charge trap region is smaller than a depth orthickness of the first charge trap region.
 11. The image sensor of claim10, wherein the first pixel includes a red pixel and the second pixelincludes a green pixel or a blue pixel.
 12. The image sensor of claim10, wherein the first pixel includes a green pixel and the second pixelincludes a blue pixel.
 13. The image sensor of claim 10, wherein each ofthe photoelectric conversion regions includes: a first dopant region ofa first conductivity type formed at a surface of a front side of thesubstrate; and a second dopant region of a second conductivity type thatis complementary to the first conductivity type formed in contact withthe first dopant region, and wherein each of the first charge trapregion and the second charge trap region includes a dopant region of thefirst conductivity type and is formed at a surface of a rear side of thesubstrate, and wherein the first dopant region, the second dopantregion, and the first or second charge trap region are overlapped witheach other and sequentially stacked.
 14. The image sensor of claim 13,wherein the second dopant region and the first or second charge trapregion are disposed at a set distance, and the second dopant region hasa uniform depth or thickness and the first charge trap region and thesecond charge trap region have depths or thicknesses different from eachother.
 15. The image sensor of claim 13, wherein the second dopantregion and the first or second charge trap region are in contact witheach other, the second dopant region, the first charge trap region andthe second charge trap region have depths or thicknesses different fromeach other, and the depth or thickness of the second dopant region isinversely proportional to the depth or thickness of the first or secondcharge trap region.
 16. A method of fabricating an image sensorcomprising: forming photoelectric conversion regions on a front side ofa substrate having a plurality of pixels, corresponding to therespective pixels; forming a dopant-injection region throughion-injection of a dopant to a rear side of the substrate; selectivelyforming a barrier pattern on the rear side of the substrate for each ofthe plurality of pixels; and forming charge trap regions havingdifferent depths or thicknesses from each other for the respectivepixels through a laser annealing for activating the dopant of thedopant-injection region.
 17. The method of claim 16, wherein in theforming of the charge trap regions, the charge trap region increases indepth or thickness for a longer wavelength of an incident light inputtedthrough the pixel of the charge trap region.
 18. The method of claim 16,wherein the selective forming of the barrier pattern includes: forming abarrier layer on the rear side of the substrate; and forming the barrierpattern through selective etching of the barrier layer.
 19. The methodof claim 18, wherein the plurality of pixels include: a first pixelsuitable for generating a first pixel signal in response to an incidentlight of a first wavelength band; and a second pixel suitable forgenerating a second pixel signal in response to an incident light of asecond wavelength band, wherein a wavelength of the second wavelengthband is shorter than a wavelength of the first wavelength band, and theforming of the barrier pattern through the selective etching of thebarrier layer includes forming the barrier pattern of a first thicknesscorresponding to the first pixel and the barrier pattern of a secondthickness greater than the first thickness corresponding to the secondpixel.
 20. The method of claim 18, wherein the plurality of pixelsinclude: first pixel suitable for generating a first pixel signal inresponse to an incident light of a first wavelength band, and a secondpixel suitable for generating a second pixel signal in response to anincident light of a second wavelength band, wherein a wavelength of thesecond wavelength band is shorter than a wavelength of the firstwavelength band, and the forming of the barrier pattern through theselective etching of the barrier layer includes forming the barrierpattern corresponding to the second pixel by removing the barrier layercorresponding to the first pixel.